IRFR2407 irfu2407 hexfet ? power mosfet seventh generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through- hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. s d g parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 42 ? i d @ t c = 100c continuous drain current, v gs @ 10v 29 ? a i dm pulsed drain current ? 170 p d @t c = 25c power dissipation 110 w linear derating factor 0.71 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 130 mj i ar avalanche current ? 25 a e ar repetitive avalanche energy ? 11 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings v dss = 75v r ds(on) = 0.026 w i d = 42a ? description 3/1/00 www.kersemi.com 1 l surface mount (IRFR2407) l straight lead (irfu2407) l advanced process technology l dynamic dv/dt rating l fast switching l fully avalanche rated pd -93862 d-pak i-pak IRFR2407 irfu2407 parameter typ. max. units r q jc junction-to-case CCC 1.4 r q ja junction-to-ambient (pcb mount)* CCC 50 c/w r q ja junction-to-ambient CCC 110 thermal resistance
2 www.kersemi.com irfr/u2407 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.078 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC 0.0218 0.026 w v gs = 10v, i d = 25a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = 10v, i d = 250a g fs forward transconductance 27 CCC CCC s v ds = 25v, i d = 25a CCC CCC 20 a v ds = 75v, v gs = 0v CCC CCC 250 v ds = 60v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 200 v gs = 20v gate-to-source reverse leakage CCC CCC -200 na v gs = -20v q g total gate charge CCC 74 110 i d = 25a q gs gate-to-source charge CCC 13 19 nc v ds = 60v q gd gate-to-drain ("miller") charge CCC 22 34 v gs = 10v ? t d(on) turn-on delay time CCC 16 CCC v dd = 38v t r rise time CCC 90 CCC i d = 25a t d(off) turn-off delay time CCC 65 CCC r g = 6.8 w t f fall time CCC 66 CCC v gs = 10v ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 2400 CCC v gs = 0v c oss output capacitance CCC 340 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 77 CCC ? = 1.0mhz, see fig. 5 c oss output capacitance CCC 15700 CCC v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance CCC 220 CCC v gs = 0v, v ds = 60v, ? = 1.0mhz c oss eff. effective output capacitance ? CCC 220 CCC v gs = 0v, v ds = 0v to 60v nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ? i sd 25a, di/dt 290a/s, v dd v (br)dss , t j 175c notes: ? starting t j = 25c, l = 0.42mh r g = 25 w , i as = 25a. ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 25a, v gs = 0v ? t rr reverse recovery time CCC 100 150 ns t j = 25c, i f = 25a q rr reverse recoverycharge CCC 400 600 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 42 ? 170 a ? c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss ? calculated continuous current based on maximum allowable junction temperature. package limitation current is 30a
www.kersemi.com 3 irfr/u2407 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 42a
4 www.kersemi.com irfr/u2407 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 25a v = 15v ds v = 37v ds v = 60v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) sin g le pulse t t = 175 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
www.kersemi.com 5 irfr/u2407 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) i , drain current (a) c d limited by package
6 www.kersemio.com irfr/u2407 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 40 80 120 160 200 240 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 10a 18a 25a
www.kersemi.com 7 irfr/u2407 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
8 www.kersemi.com irfr/u2407 d-pak (to-252aa) package outline dimensions are shown in millimeters (inches) d-pak (to-252aa) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) m in . 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - s o u r c e 4 - d r a in 10.42 (.410) 9.40 (.370) notes: 1 d imension ing & tolerancin g per ansi y 14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r m s t o je d e c o u t lin e t o -252 a a . 4 dimensions show n are before solder dip, sold er d ip max. +0.16 (.006).
www.kersemi.com 9 irfr/u2407 i-pak (to-251aa) package outline dimensions are shown in millimeters (inches) i-pak (to-251aa) part marking information 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010 ) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - g a t e 2 - d r a in 3 - source 4 - d r a in notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 c o n f o r ms to je d e c o u t lin e to -25 2a a . 4 d im e n s io n s s h o w n a r e b e f o r e s o l d e r d ip , solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
10 www.kersemi.com irfr/u2407 d-pak (to-252aa) tape & reel information dimensions are shown in millimeters (inches) tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline confo rms to eia-481. 16 mm 13 inc h
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